In the fabrication of amplifying
crystals semiconductor material plays a major role. The first transistor is
made of semiconductor material, germanium in 1950s. When an electrical voltage
is applied, this semiconductor material is neither fully conducting nor fully
insulating.
Later silicon transistors are
developed. Due to successful performance at high temperatures silicon
transistor are more used from the year 1954. Commercial silicon transistors
were available from Texas Instruments. Later extensive research is made from
silicon transistors and now this lead to development of integrated circuit and
microprocessor devices.
Later in 1959, first field effect
transistor was developed. It consists of three layers metal (M-gate)
,Oxide(O-insulation ), silicon (S-semiconductor).







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